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CSD18534KCS
1个N沟道 耐压:60V 电流:100A
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- 描述
- CSD18534KCS 采用 TO-220 封装的单路、9.5mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
- 品牌名称
- TI(德州仪器)
- 商品型号
- CSD18534KCS
- 商品编号
- C2867071
- 商品封装
- TO-220
- 包装方式
- 管装
- 商品毛重
- 1.7克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 1个N沟道 | |
| 漏源电压(Vdss) | 60V | |
| 连续漏极电流(Id) | 100A | |
| 导通电阻(RDS(on)) | 7.6mΩ@10V | |
| 耗散功率(Pd) | 107W | |
| 阈值电压(Vgs(th)) | 1.9V |
| 属性 | 参数值 | |
|---|---|---|
| 栅极电荷量(Qg) | 24nC@10V | |
| 输入电容(Ciss) | 1.88nF | |
| 反向传输电容(Crss) | 6.5pF | |
| 工作温度 | -55℃~+175℃ | |
| 类型 | N沟道 | |
| 输出电容(Coss) | 205pF |
商品概述
This device is designed to provide the lowest on-resistance and gate charge in an ultra-small form factor package with ultra-thin profile and excellent thermal characteristics. The combination of low on-resistance and a small, low-profile package makes this device an ideal choice for battery-powered applications with limited operating space.
商品特性
- Dual P-channel MOSFETs
- Common source configuration
- 1.5mm x 1mm small package size
- Gate-source voltage clamping
- Gate electrostatic discharge (ESD) protection - 3kV
- Lead-free
- RoHS compliant
- Halogen-free
应用领域
- Battery management
- Load switching
- Battery protection