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CSD18542KTT
1个N沟道 耐压:60V 电流:200A
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- 描述
- CSD18542KTT 采用 D2PAK 封装的单路、4mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
- 品牌名称
- TI(德州仪器)
- 商品型号
- CSD18542KTT
- 商品编号
- C2867559
- 商品封装
- TO-263-3
- 包装方式
- 编带
- 商品毛重
- 3.1克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 1个N沟道 | |
| 漏源电压(Vdss) | 60V | |
| 连续漏极电流(Id) | 200A | |
| 导通电阻(RDS(on)) | 5.1mΩ@4.5V | |
| 耗散功率(Pd) | 250W | |
| 阈值电压(Vgs(th)) | 2.2V@250uA |
| 属性 | 参数值 | |
|---|---|---|
| 栅极电荷量(Qg) | 57nC@10V | |
| 输入电容(Ciss) | 5.07nF | |
| 反向传输电容(Crss) | 14pF | |
| 工作温度 | -55℃~+175℃ | |
| 类型 | N沟道 | |
| 输出电容(Coss) | 740pF |
商品概述
This 99 mΩ, 30V N-channel FemtoFET™ MOSFET is designed and optimized to minimize the space occupied in many handheld and mobile applications. This technology can reduce the package size by at least 60% while replacing standard small-signal MOSFETs.
商品特性
- Low on-resistance
- Ultra-low Qg and Qgd
- Low threshold voltage
- Ultra-small package size (0402 case size)
- Ultra-thin package
- Thickness of 0.2 mm
- Integrated ESD protection diode
- Rating >4 kV HBM
- Rating >2 kV CDM
- Lead-free and halogen-free
- RoHS compliant
应用领域
- Optimized for load switch applications
- Optimized for general-purpose switch applications
- Battery applications
- Handheld and mobile applications