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FCP7N60
1个N沟道 耐压:600V 电流:7A
- 描述
- SuperFET MOSFET 是第一代高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此工艺专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET MOSFET 非常适用于开关电源应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。
- 品牌名称
- onsemi(安森美)
- 商品型号
- FCP7N60
- 商品编号
- C463938
- 商品封装
- TO-220F-3
- 包装方式
- 管装
- 商品毛重
- 2.779克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 1个N沟道 | |
| 漏源电压(Vdss) | 600V | |
| 连续漏极电流(Id) | 7A |
| 属性 | 参数值 | |
|---|---|---|
| 导通电阻(RDS(on)) | - | |
| 耗散功率(Pd) | 31W | |
| 阈值电压(Vgs(th)) | 5V |
商品概述
SuperFET MOSFET is the first-generation high-voltage superjunction (SJ) MOSFET product series that uses charge balance technology to achieve excellent low on-resistance and lower gate charge performance. This technology is specifically designed to minimize conduction losses and provide excellent switching performance, dv/dt ratings, and higher avalanche energy. Therefore, SuperFET MOSFETs are well-suited for switching power supply applications, such as power factor correction (PFC), server/telecom power supplies, flat-panel TV power supplies, ATX power supplies, and industrial power supply applications.
商品特性
- 650 V @ T_J = 150°C
- Typical RDS(on) = 530 mΩ
- Ultra-low gate charge (Typical Q_g = 23 nC)
- Low effective output capacitance (Typical C_oss(eff.) = 60 pF)
- 100% avalanche tested
- RoHS compliant
应用领域
- LCD/LED/PDP TVs
- Solar inverters
- AC-DC power supplies