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CSD23381F4
1个P沟道 耐压:12V 电流:2.3A
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- 描述
- CSD23381F4 采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单通道、175mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET
- 品牌名称
- TI(德州仪器)
- 商品型号
- CSD23381F4
- 商品编号
- C129355
- 商品封装
- PicoStar-3
- 包装方式
- 编带
- 商品毛重
- 0.027克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 1个P沟道 | |
| 漏源电压(Vdss) | 12V | |
| 连续漏极电流(Id) | 2.3A | |
| 导通电阻(RDS(on)) | 970mΩ@1.8V,0.1A | |
| 耗散功率(Pd) | 500mW | |
| 阈值电压(Vgs(th)) | 1.2V@250uA |
| 属性 | 参数值 | |
|---|---|---|
| 栅极电荷量(Qg) | 1.14nC@4.5V | |
| 输入电容(Ciss) | 236pF | |
| 反向传输电容(Crss) | 6.9pF | |
| 工作温度 | -55℃~+150℃ | |
| 类型 | P沟道 | |
| 输出电容(Coss) | 98pF |
商品概述
This 150 mΩ, 12 V P-channel FemtoFET MOSFET is designed and optimized to minimize the space occupation in many handheld and mobile applications. This technology can reduce the package size by at least 60% while replacing standard small-signal MOSFETs.
商品特性
- Ultra-low on-resistance
- Ultra-low Qg and Qgd
- High drain operating current
- Ultra-small package size (0402 case size)
- Ultra-thin package
- Maximum height: 0.36 mm
- Integrated ESD protection diode
- Rating >4 kV HBM
- Rating >2 kV CDM
- Lead-free and halogen-free
- RoHS compliant
应用领域
- Optimized for load switch applications
- Optimized for general-purpose switch applications
- Battery applications
- Handheld and mobile applications