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SM36T1G实物图
  • SM36T1G商品缩略图
  • SM36T1G商品缩略图
  • SM36T1G商品缩略图

温馨提醒:图片仅供参考,商品以实物为准

SM36T1G

单向ESD 36V截止 峰值浪涌电流:4A@8/20us

SMT扩展库SMT补贴嘉立创PCB免费打样
描述
这些双片式硅浪涌保护二极管专为需要瞬态过压保护功能的应用而设计。它们适用于对电压和静电放电敏感的设备,如计算机、打印机、商用机器、通信系统、医疗设备等应用场景。其双结共阳极设计仅用一个封装即可保护两条独立线路。这些器件非常适合电路板空间有限的情况。
品牌名称
onsemi(安森美)
商品型号
SM36T1G
商品编号
C233425
商品封装
SOT-23​
包装方式
编带
商品毛重
0.03克(g)

商品参数

属性参数值
商品目录静电和浪涌保护(TVS/ESD)
极性单向
反向截止电压(Vrwm)36V
钳位电压60V
峰值脉冲电流(Ipp)4A@8/20us
峰值脉冲功率(Ppp)300W@8/20us
属性参数值
击穿电压46.95V
反向电流(Ir)1uA
通道数双路
防护等级IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
类型ESD
Cj-结电容45pF

商品概述

These dual-chip silicon surge protection diodes are designed for applications requiring transient overvoltage protection capabilities. They are suitable for voltage- and ESD-sensitive devices, such as computers, printers, commercial machines, communication systems, medical equipment, and other applications. Their dual-junction common-anode design can protect two independent lines with only one package. These devices are very suitable for situations where board space is limited.

商品特性

  • SOT-23 package allows two independent unidirectional configurations or a single bidirectional configuration
  • Operating peak reverse voltage range: -5.0 V to 24 V
  • Peak power: 300 Watt (8×20 μs)
  • Low leakage
  • Flammability rating UL 94 V-0
  • The SZ prefix is suitable for automotive and other applications with unique site and control change requirements; compliant with AEC-Q101 standards and has PPAP capabilities
  • These are lead-free devices

应用领域

  • Computer interface protection
  • Microprocessor protection

数据手册PDF