- 引脚图
- 焊盘图
温馨提醒：图片仅供参考，商品以实物为准
F411MR12W2M1HPB76BPSA1
F411MR12W2M1HPB76BPSA1
- 品牌名称
- Infineon(英飞凌)
- 商品型号
- F411MR12W2M1HPB76BPSA1
- 商品编号
- C20190902
- 包装方式
- 托盘
- 商品毛重
- 1克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 4个N沟道 | |
| 漏源电压(Vdss) | 1.2kV | |
| 连续漏极电流(Id) | 60A | |
| 导通电阻(RDS(on)) | 10.8mΩ@18V | |
| 阈值电压(Vgs(th)) | 4.3V |
| 属性 | 参数值 | |
|---|---|---|
| 栅极电荷量(Qg) | 223nC | |
| 输入电容(Ciss) | 6.6nF | |
| 反向传输电容(Crss) | 21pF | |
| 工作温度 | -40℃~+175℃ | |
| 类型 | N沟道 | |
| 输出电容(Coss) | 315pF |
商品特性
- 电气特性
- VDSS = 1200 V
- IDN = 75 A / IDRM = 150 A
- 低电感设计
- 低开关损耗
- 高电流密度
- 机械特性
- PressFIT 接触技术
- 集成 NTC 温度传感器
- 集成安装夹,安装牢固
- 预涂覆热界面材料
应用领域
-高频开关应用-DC/DC 转换器-UPS 系统-电动汽车直流充电器
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