- 引脚图
- 焊盘图
温馨提醒：图片仅供参考，商品以实物为准
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 2个N沟道 | |
| 漏源电压(Vdss) | 1.2kV | |
| 连续漏极电流(Id) | 390A | |
| 导通电阻(RDS(on)) | 1.47mΩ@18V | |
| 阈值电压(Vgs(th)) | 4.3V | |
| 栅极电荷量(Qg) | 1.6uC |
| 属性 | 参数值 | |
|---|---|---|
| 输入电容(Ciss) | 48.4nF | |
| 反向传输电容(Crss) | 158pF | |
| 工作温度 | -40℃~+175℃ | |
| 配置 | 半桥 | |
| 类型 | N沟道 | |
| 输出电容(Coss) | 2.4nF |
商品概述
采用TO247-4L塑料封装的碳化硅MOSFET，专为高频、高效系统设计。 无卤 无铅
商品特性
- 电气特性
- 漏源极击穿电压(VDSS) = 1200 V
- 额定电流(IDN) = 560 A / 重复峰值电流(IDRM) = 1120 A
- 高电流密度
- 低开关损耗
- 机械特性
- 4 kV交流耐压1分钟
应用领域
- 不间断电源(UPS)系统
- 太阳能应用
- 直流-直流(DC/DC)转换器
- 高频开关应用
- 储能系统
- 电动汽车直流充电器
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