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FF2MR12KM1HPHPSA1
FF2MR12KM1HPHPSA1
- 品牌名称
- Infineon(英飞凌)
- 商品型号
- FF2MR12KM1HPHPSA1
- 商品编号
- C20190920
- 包装方式
- 托盘
- 商品毛重
- 1克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 2个N沟道 | |
| 漏源电压(Vdss) | 1.2kV | |
| 连续漏极电流(Id) | 350A | |
| 导通电阻(RDS(on)) | 1.96mΩ@18V | |
| 阈值电压(Vgs(th)) | 5.15V | |
| 栅极电荷量(Qg) | 1.2uC |
| 属性 | 参数值 | |
|---|---|---|
| 输入电容(Ciss) | 36.3nF | |
| 反向传输电容(Crss) | 118pF | |
| 工作温度 | -40℃~+175℃ | |
| 配置 | 半桥 | |
| 类型 | N沟道 | |
| 输出电容(Coss) | 1.8nF | |
| 栅极电压(Vgs) | ±20V |
商品特性
- 电气特性
- VDSS = 1200 V
- IDN = 420 A / IDRM = 840 A
- 高电流密度
- 低开关损耗
- 机械特性
- 4 kV交流耐压1分钟绝缘
- 预涂覆热界面材料
应用领域
- 不间断电源(UPS)系统
- 太阳能应用
- DC/DC转换器
- 高频开关应用
- 储能系统
- 电动汽车直流充电器
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