- 引脚图
- 焊盘图
温馨提醒：图片仅供参考，商品以实物为准
FF17MR12W1M1HB11BPSA1
FF17MR12W1M1HB11BPSA1
- 品牌名称
- Infineon(英飞凌)
- 商品型号
- FF17MR12W1M1HB11BPSA1
- 商品编号
- C20190910
- 包装方式
- 托盘
- 商品毛重
- 1克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 2个N沟道 | |
| 漏源电压(Vdss) | 1.2kV | |
| 连续漏极电流(Id) | 50A | |
| 导通电阻(RDS(on)) | 16.2mΩ@18V | |
| 阈值电压(Vgs(th)) | 4.3V | |
| 栅极电荷量(Qg) | 149nC |
| 属性 | 参数值 | |
|---|---|---|
| 输入电容(Ciss) | 4.4nF | |
| 反向传输电容(Crss) | 14pF | |
| 工作温度 | -40℃~+175℃ | |
| 配置 | 半桥 | |
| 类型 | N沟道 | |
| 输出电容(Coss) | 210pF |
商品特性
- 电气特性:
- VDSS = 1200 V
- IDN = 50 A / IDRM = 100 A
- 低电感设计
- 低开关损耗
- 机械特性:
- PressFIT接触技术
- 集成NTC温度传感器
- 由于集成安装夹,安装坚固
应用领域
- 高频开关应用
- DC/DC转换器
- UPS系统
- EV直流充电器
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