- 引脚图
- 焊盘图
温馨提醒：图片仅供参考，商品以实物为准
FF11MR12W2M1HB70BPSA1
FF11MR12W2M1HB70BPSA1
- 品牌名称
- Infineon(英飞凌)
- 商品型号
- FF11MR12W2M1HB70BPSA1
- 商品编号
- C20190908
- 包装方式
- 托盘
- 商品毛重
- 1克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | IGBT管/模块 | |
| IGBT类型 | - | |
| 耗散功率(Pd) | - | |
| 集射极击穿电压(Vces) | - | |
| 集电极电流(Ic) | - | |
| 集电极脉冲电流(Icm) | - | |
| 集电极截止电流(Ices) | - | |
| 集射极饱和电压(VCE(sat)) | - | |
| 栅极阈值电压(Vge(th)) | - | |
| 栅极电荷量(Qg) | - |
| 属性 | 参数值 | |
|---|---|---|
| 输入电容(Cies) | - | |
| 输出电容(Coes) | - | |
| 反向传输电容(Cres) | - | |
| 开启延迟时间(Td(on)) | - | |
| 关断延迟时间(Td(off)) | - | |
| 导通损耗(Eon) | - | |
| 关断损耗(Eoff) | - | |
| 反向恢复时间(Trr) | - | |
| 工作温度 | - |
商品特性
- V_DSS = 1200 V
- I_DN = 75 A / I_DRM = 150 A
- 低电感设计
- 低开关损耗
- 采用低热阻氮化铝衬底
- 采用PressFIT接触技术
- 集成NTC温度传感器
- 因集成安装夹而具备坚固的安装特性
应用领域
- 高频开关应用
- DC/DC转换器
- 电机驱动
- 不间断电源系统
- 电动汽车直流充电器
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