2SK1959-T1-AZ
N沟道 MOSFET,电流:1.0A,耐压:16V
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- 品牌名称
- RENESAS(瑞萨)/IDT
- 商品型号
- 2SK1959-T1-AZ
- 商品编号
- C3282984
- 包装方式
- 袋装
- 商品毛重
- 1克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 漏源电压(Vdss) | 16V | |
| 连续漏极电流(Id) | 2A | |
| 导通电阻(RDS(on)) | 3.2Ω@1.5V | |
| 耗散功率(Pd) | 2W |
| 属性 | 参数值 | |
|---|---|---|
| 阈值电压(Vgs(th)) | 1.1V | |
| 输入电容(Ciss) | 160pF | |
| 反向传输电容(Crss) | 50pF | |
| 工作温度 | -55℃~+150℃ | |
| 类型 | N沟道 |
应用领域
- Standard grade: Computers, office equipment, communication devices, test and measurement equipment, audio-visual equipment, household electronic appliances, machine tools, personal electronic devices, industrial robots
- High-quality grade: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, medical devices not specifically used for life support