MMFT1N10ET1
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 漏源电压(Vdss) | 100V | |
| 连续漏极电流(Id) | 1A | |
| 导通电阻(RDS(on)) | 250mΩ@10V |
| 属性 | 参数值 | |
|---|---|---|
| 耗散功率(Pd) | 800mW | |
| 阈值电压(Vgs(th)) | 4.5V@1mA | |
| 类型 | N沟道 |
应用领域
- Standard grade: Computers, office equipment, communication devices, test and measurement equipment, audio-visual equipment, household electronic appliances, machine tools, personal electronic devices, industrial robots
- High-quality grade: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, medical equipment not specifically used for life support