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SQJ914EP-T1_GE3
SQJ914EP-T1_GE3
SMT扩展库PCB免费打样
私有库下单最高享92折
- 品牌名称
- VISHAY(威世)
- 商品型号
- SQJ914EP-T1_GE3
- 商品编号
- C727672
- 商品封装
- PowerPAK-SO-8L
- 包装方式
- 编带
- 商品毛重
- 0.184402克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 2个N沟道 | |
| 漏源电压(Vdss) | 30V | |
| 连续漏极电流(Id) | 30A | |
| 导通电阻(RDS(on)) | 12mΩ@10V | |
| 耗散功率(Pd) | 27W | |
| 阈值电压(Vgs(th)) | 2.5V | |
| 栅极电荷量(Qg) | 25nC@10V |
| 属性 | 参数值 | |
|---|---|---|
| 输入电容(Ciss) | 1.11nF | |
| 反向传输电容(Crss) | 80pF | |
| 工作温度 | -55℃~+175℃ | |
| 配置 | - | |
| 类型 | N沟道 | |
| 输出电容(Coss) | 167pF | |
| 栅极电压(Vgs) | ±20V |
商品特性
- TrenchFET功率MOSFET
- 通过AEC-Q101认证
- 100%进行Rg和UIS测试
- 符合RoHS标准
- N沟道MOSFET
- 无卤
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