2SK3290BNTL-E
商品参数
参数完善中
商品特性
- 低导通电阻
- 典型RDS = 455 mΩ(VGS = 10 V、ID = 250 mA时)
- 典型RDS = 900 mΩ(VGS = 4 V、ID = 100 mA时)
- 4V栅极驱动器件
- 小封装(MPAK)
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