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SI3493BDV-T1-GE3
SI3493BDV-T1-GE3
- 品牌名称
- VISHAY(威世)
- 商品型号
- SI3493BDV-T1-GE3
- 商品编号
- C727595
- 商品封装
- TSOP-6-1.5mm
- 包装方式
- 编带
- 商品毛重
- 0.044克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 1个P沟道 | |
| 漏源电压(Vdss) | 20V | |
| 连续漏极电流(Id) | 8A | |
| 导通电阻(RDS(on)) | 27.5mΩ@4.5V | |
| 耗散功率(Pd) | 2.08W | |
| 阈值电压(Vgs(th)) | 400mV | |
| 栅极电荷量(Qg) | 26.2nC |
| 属性 | 参数值 | |
|---|---|---|
| 输入电容(Ciss) | 1.805nF | |
| 反向传输电容(Crss) | 245pF | |
| 工作温度 | -55℃~+150℃ | |
| 配置 | - | |
| 类型 | P沟道 | |
| 输出电容(Coss) | 285pF | |
| 栅极电压(Vgs) | ±8V |
商品特性
- 根据IEC 61249-2-21定义为无卤产品
- 沟道型场效应晶体管(TrenchFET)功率MOSFET
- 针对脉宽调制(PWM)优化
- 100%进行栅极电阻(Rg)测试
- 符合RoHS指令2002/95/EC
应用领域
- 负载开关
- 功率放大器(PA)开关
- 电池开关
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