CD74HCT365E

HC365、HCT365 和 HC366 硅栅 CMOS 三态缓冲器是通用型高速同相和反相缓冲器。 The ’HC365, ’HCT365, and ’HC366 silicon gate CMOS three-state buffers are general purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs. The ’HC365 and ’HCT365 are non-inverting buffers, whereas the ’HC366 is an inverting buffer. These devices have two three-state control inputs (OE1 and OE2) which are NORed together to control all six gates. The ’HCT365 logic families are speed, function and pin compatible with the standard LS logic family.

• 缓冲输入
• 高电流总线驱动器输出扇出（在温度范围内）
  • 标准输出：10 个 LSTTL 负载
  • 总线驱动器输出：15 个 LSTTL 负载
• 宽工作温度范围： - 55 °C 至 +125 °C
• 平衡的传播延迟及转换时间
• 与 LSTTL 逻辑 IC 相比，可显著降低功耗
• HC 类型工作电压为 2V 至 6V
• 高抗噪性：当 VCC = 5V 时，N1L = 30%，NIH = VCC 的 30%
• HCT 类型
  • 工作电压为 4.5V 至 5.5V
  • 直接 LSTTL 输入逻辑兼容性，VIL = 0.8V（最大值），VIH = 2V（最小值）
  • CMOS 输入兼容性，当电压为 VOL、VOH 时，II ≤ 1μA