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- 焊盘图
温馨提醒：图片仅供参考，商品以实物为准
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 1个N沟道 | |
| 漏源电压(Vdss) | 40V | |
| 连续漏极电流(Id) | 16.4A | |
| 导通电阻(RDS(on)) | 7.8mΩ@10V | |
| 耗散功率(Pd) | 3.8W |
| 属性 | 参数值 | |
|---|---|---|
| 阈值电压(Vgs(th)) | 2.5V | |
| 栅极电荷量(Qg) | 23nC@4.5V | |
| 输入电容(Ciss) | - | |
| 反向传输电容(Crss) | 5.1pF | |
| 工作温度 | -55℃~+150℃ |
商品特性
- 沟槽式场效应功率MOSFET
- PWM优化
- 100% Rq测试
应用领域
-同步整流-中间开关-同步降压
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