CD74HC366QDRQ1

符合汽车应用要求缓冲输入高电流总线驱动器输出扇出（在温度范围内） CD74HC365-Q1、CD74HC366-Q1 和 CD74HCT365-Q1 硅栅 CMOS 三态缓冲器是通用型高速同相和反相缓冲器。它们具有大驱动电流输出，因而即使在驱动大的总线电容时仍能实现高速运作。这些电路具有很低的CMOS 电路功耗，然而速度却与低功耗肖特基 TTL 电路不相上下。这两种电路均能够驱动多达 15 个低功耗肖特基输入。 宽工作温度范围：– 40°C 至 125°C 平衡的传播延迟及转换时间与 LSTTL 逻辑 IC 相比，功耗显著降低 HC 类型– 工作电压为 2V 至 6V高抗噪性：当 VCC=5V 时，N1L=30% ，NIH= VCC 的 30% HCT 类型 – 工作电压为 4.5V 至 5.5V 直接 LSTTL 输入逻辑兼容性，VIL=0.8V （最大值），VIH=2V （最小值）CMOS 输入兼容性，当电压为 VOL, VOH 时，II≤1μA

The CD74HC365-Q1, CD74HC366-Q1, and CD74HCT365-Q1 silicon gate CMOS three state buffers are general purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs. The CD74HC365-Q1 and CD74HCT365-Q1 are non-inverting buffers, whereas the CD74HC366-Q1 is an inverting buffer. These devices have two three-state control inputs (OE1 and OE2) which are NORed together to control all six gates.