LM5109BMAX/NOPB

LM5109B器件是一款经济高效的高电压栅极驱动器，专为驱动采用同步降压或半桥配置的高侧和低侧N沟道MOSFET而设计。悬空高侧驱动器能够在高达90V的电源轨电压下工作。输出通过经济高效的TTL和CMOS兼容输入阈值独立控制。稳健可靠的电平转换技术同时拥有高运行速度和低功耗特性，并且可提供从控制输入逻辑到高侧栅极驱动器的干净电平转换。该器件在低侧和高侧电源轨上提供了欠压锁定功能。该器件采用8引脚SOIC和耐热增强型8引脚WSON封装。

The LM5109B is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel FETs in a synchronous buck or a half-bridge configuration. The outputs are independently controlled with TTL and CMOS-compatible input thresholds. The floating high-side driver is capable of working with HB voltage up to 108 V. An external high-voltage diode must be provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails.

• 可驱动高侧和低侧N沟道金属氧化物半导体场效应晶体管(MOSFET)
• 1A峰值输出电流（1.0A灌电流和1.0A拉电流）
• 与独立的晶体管 - 晶体管逻辑电路(TTL)和互补金属氧化物半导体(CMOS)兼容的输入
• 自举电源电压高达108VDC
• 短暂传播时间（典型值为30ns）
• 可以15ns的上升和下降时间驱动1000pF负载
• 优异的传播延迟匹配（典型值为2ns)
• 支持电源轨欠压锁定
• 低功耗
• 8引脚小外形尺寸集成电路(SOIC)和耐热增强型8引脚晶圆级小外形无引线(WSON)封装

• 电流反馈推挽式转换器
• 半桥和全桥电源转换器
• 固态电机驱动器
• 双开关正激电源转换器