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TPNTA4153NT1G
1个N沟道 耐压:20V 电流:0.8A
SMT扩展库SMT补贴嘉立创PCB免费打样
- 描述
- 这款增强型MOSFET,具备卓越的低导通电阻和快速开关性能，广泛应用于充电设备、电源管理及高效率电子系统中，提供高效稳定的功率转换与控制功能。
- 品牌名称
- TECH PUBLIC(台舟)
- 商品型号
- TPNTA4153NT1G
- 商品编号
- C2875154
- 商品封装
- SOT-523
- 包装方式
- 编带
- 商品毛重
- 0.026克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 1个N沟道 | |
| 漏源电压(Vdss) | 20V | |
| 连续漏极电流(Id) | 800mA | |
| 导通电阻(RDS(on)) | 300mΩ@2.5V | |
| 耗散功率(Pd) | 280mW |
| 属性 | 参数值 | |
|---|---|---|
| 阈值电压(Vgs(th)) | 1.1V@250uA | |
| 栅极电荷量(Qg) | - | |
| 输入电容(Ciss) | 120pF | |
| 反向传输电容(Crss) | 15pF | |
| 工作温度 | -55℃~+150℃ | |
| 输出电容(Coss) | 20pF |
商品概述
The CSD86336Q3D NexFET™ power block is an optimized design solution for synchronous buck applications, capable of delivering high current, high efficiency, and high-frequency performance in a compact 3.3mm × 3.3mm package. This product is optimized for 5V gate drive applications and provides a flexible solution for high-density power supplies when used with any 5V gate drive from an external controller/driver.
商品特性
- Half-bridge power block
- Up to 93.0% system efficiency at 12A current
- Operating current up to 20A
- High-frequency operation (up to 1.5 MHz)
- High-density, small-outline no-lead (SON) 3.3mm × 3.3mm package
- Optimized for 5V gate drive
- Low switching losses
- Ultra-low inductance package
- RoHS compliant
- Halogen-free
- Lead-free pin plating
应用领域
- Synchronous buck converters
- High-frequency applications
- High-current, low-duty-cycle applications
- Multi-phase synchronous buck converters
- Point-of-load (POL) DC/DC converters
- IMVP, VRM, and VRD applications