ISL6115AIBZ-T

工业品

价格：￥18.34价格含税（税率13%）

品牌名称: RENESAS(瑞萨)/IDT
商品型号: ISL6115AIBZ-T
商品编号: C6644260
商品毛重: 1克(g)

广东仓0

购买数量

个

(2500个/圆盘，最小起订量1个，递增量：1)

总价金额：

￥0.00

近期成交0单

商品参数
商品详情
规格书

商品参数

参数完善中

商品详情

产品特点 FEATURES

This is a fully-featured hot swap power controller targeting +12V applications, with an integrated charge pump (6.5V above IC bias) that improves efficiency over previous 5V gate drive versions. Key features include:

1 HOT SWAP support: Enables single power distribution control for +12V systems, allowing hot plugging of components without disrupting the power supply.

2 Overcurrent fault isolation: Protects the power rail by isolating faulty loads during overcurrent events.

3 Programmable parameters: Current regulation level (via external resistors), current regulation time to latch-off (via external capacitor), and turn-on ramp (adjustable).

4 Enhanced charge pump: Drives N-Channel MOSFET gate to 6.5V above IC bias, ensuring efficient operation of the pass FET.

5 Protection indicators: Undervoltage (UV) turn-on and overcurrent (OC) latch indicators for real-time status monitoring.

6 Fast response: Two levels of overcurrent detection provide fast response to varying fault conditions, with a 1us response time to dead short.

7 Wide compatibility: Rail-to-rail common mode input voltage range; Pb-Free and RoHS compliant.

使用场景 APPLICATIONS

1 Power distribution control: Used in systems requiring reliable +12V power distribution to multiple loads, ensuring stable power delivery.

2 Hot plug components/circuits: Ideal for server racks, telecom equipment (line cards), industrial control systems, and data centers where modules need to be added/removed without powering down the entire system.

3 Embedded systems: Suitable for field-replaceable units (FRUs) in embedded devices, allowing on-site maintenance without system shutdown.

4 Test and evaluation platforms: Used in evaluation boards (like ISL6115AEVAL1Z) to validate power control solutions for +12V applications.

注意事项 PRECAUTIONS

1 Electrical limits: Do not exceed absolute maximum ratings (e.g., VDD: -0.3V to +16V; GATE: -0.3V to VDD+8V) for extended periods to avoid component damage.

2 PWRON input: Do not drive PWRON input above 5V; exceeding 6V may cause internal charge pump malfunction.

3 Noise reduction: Add a 100pF capacitor across the RSET resistor to minimize noise influence on the current regulation threshold voltage (CR Vth).

4 PCB layout: For the sense resistor (RSET and ISEN pins), use direct, short traces with zero current in the sense lines to ensure accurate current measurement (refer to Figure1 in the data sheet).

5 MOSFET operation: Balance current regulation limit and timing requirements to avoid excessive power dissipation in the external N-Channel MOSFET during soft-start and current limit modes.

6 ESD protection: Handle the IC with proper electrostatic discharge (ESD) precautions (compliant with Human Body Model 2.5kV and Machine Model 200V).

7 Soldering: Follow Pb-Free reflow profile guidelines for the 8-Lead SOIC package to ensure reliable connections.