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IGW50N65HS
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | IGBT管/模块 | |
| IGBT类型 | - | |
| 耗散功率(Pd) | 305W | |
| 集射极击穿电压(Vces) | 650V | |
| 集电极电流(Ic) | 80A | |
| 集电极脉冲电流(Icm) | 150A | |
| 集电极截止电流(Ices) | - | |
| 集射极饱和电压(VCE(sat)) | 1.65V | |
| 栅极阈值电压(Vge(th)) | 4V | |
| 栅极电荷量(Qg) | 120nC@15V |
| 属性 | 参数值 | |
|---|---|---|
| 输入电容(Cies) | 3nF | |
| 输出电容(Coes) | 50pF | |
| 反向传输电容(Cres) | 11pF | |
| 开启延迟时间(Td(on)) | 21ns | |
| 关断延迟时间(Td(off)) | 180ns | |
| 导通损耗(Eon) | 520uJ | |
| 关断损耗(Eoff) | 180uJ | |
| 反向恢复时间(Trr) | - | |
| 工作温度 | -40℃~+175℃ |
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