ONET8551TY
ONET8551TY
- 描述
- ONET8551T 具有 RSSI 的 11.3Gbps 限幅跨阻放大器
- 品牌名称
- TI(德州仪器)
- 商品型号
- ONET8551TY
- 商品编号
- C1346209
- 包装方式
- 托盘
- 商品毛重
- 0.001克(g)
商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 特殊功能放大器 | |
| 放大器类型 | 限幅放大器 |
| 属性 | 参数值 | |
|---|---|---|
| 工作温度 | -40℃~+100℃ |
商品概述
ONET8551T 是一款高速、高增益、限幅互阻抗放大器,用在数据传输速率高达11.3 Gbps 的光接收器中。它特有低输入引入噪声,9GHz 带宽,10kΩ 小信号互阻,和一个接收信号强度指示器(RSSI)。 ONET8551T 器件以芯片形式提供,其中包括一个片上VCC 旁路电容器,并且针对晶体管型外壳结构(TOcan) 封装进行了优化。 ONET8551T 器件需要一个 +3.3V 单电源。功效设计的功率耗散通常少于 95mW 。该器件可在 -40°C 至100°C 外壳(IC 在背面)环境下工作。 The ONET8551T device consists of the signal path, supply filters, a control block for DC input bias, automatic gain control (AGC), and received signal strength indication (RSSI). The RSSI provides the bias for the TIA stage and the control for the AGC. The signal path consists of a transimpedance amplifier stage, a voltage amplifier, and a CML output buffer. The on-chip filter circuit provides a filtered VCC for the PIN photodiode and for the transimpedance amplifier. The DC input bias circuit and automatic gain control use internal low pass filters to cancel the DC current on the input and to adjust the transimpedance amplifier gain. Furthermore, circuitry is provided to monitor the received signal strength. The first stage of the signal path is a transimpedance amplifier, which converts the photodiode current into a voltage. If the input signal current exceeds a certain value, the transimpedance gain is reduced by a nonlinear AGC circuit to limit the signal amplitude. The second stage is a limiting voltage amplifier that provides additional limiting gain and converts the single - ended input voltage into a differential data signal. The output stage provides CML outputs with an on - chip 50 - Ω back - termination to VCC. The FILTER pins provide a regulated and filtered VCC for a PIN photodiode bias. The supply voltages for the transimpedance amplifier are filtered by on - chip capacitors, thus an external supply filter capacitor is not necessary. The input stage has a separate VCC supply (VCC_IN), which is not connected on chip to the supply of the limiting and CML stages (VCC_OUT). The voltage drop across the regulated FILTER FET is monitored by the bias and RSSI control circuit block in the case where a PIN diode is biased using the FILTER pins. If the DC input current exceeds a certain level, then it is partially cancelled by a controlled current source. This process keeps the transimpedance amplifier stage within sufficient operating limits for optimum performance. The automatic gain control circuitry adjusts the voltage gain of the AGC amplifiers.
商品特性
- 9GHz 带宽
- 10kΩ 差差分分小小信信号号互互阻
- -20dBm 灵灵敏敏度度
- 0.9μA_BMS 输输入入引引入入噪噪声
- 2.5mA_p - p 输输入入过过载载电电流
- 接收信号强度指示(RSSI)
- 92mW 典典型型功功率率耗耗散
- 支持片上50Ω 背背向向端端接接的的电电流流模模式式逻逻辑辑(CML) 数数据据输输出出
- 片上电源滤波电容器
- +3.3V 单电源
- 芯片尺寸:870μm x 1036μm
应用领域
- 10G 以太网
- 8G 和10G 光纤通道
- 10G 以太无源光网络(EPON)
- 同步光网络(SONET) OC - 192
- 6G 和10G 通用公共无线接口(CPRI) 和开放基站架构协议(OBSAI)
- 光电二极管(PIN) 和雪崩光电二极管(APD) 预放大器接收器
