商品参数
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 数量 | 1个P沟道 | |
| 漏源电压(Vdss) | 60V | |
| 连续漏极电流(Id) | 170mA | |
| 导通电阻(RDS(on)) | 3.3Ω@10V | |
| 耗散功率(Pd) | 350mW | |
| 阈值电压(Vgs(th)) | 1.4V | |
| 栅极电荷量(Qg) | 1.77nC |
| 属性 | 参数值 | |
|---|---|---|
| 输入电容(Ciss) | 43pF | |
| 反向传输电容(Crss) | 1.8pF | |
| 工作温度 | -55℃~+150℃ | |
| 配置 | - | |
| 类型 | P沟道 | |
| 输出电容(Coss) | 2.9pF | |
| 栅极电压(Vgs) | ±20V |
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