商品参数
参数完善中
商品特性
-具备±20ppm(频率稳定性)-陶瓷封装-CMOS工艺-卷带包装
应用领域
-微处理器-SONET/SDH/DWDM系统-存储区域网络-数字视频-基站
- SQG32L2A271N-312.500M
- SQG32L3A071N-300.000M
- SQG32L2D271N-312.500M
- SXO32C3C271-24.576M
- SXO53P3C271-250.000M
- SXO75P3A381-125.000M
- SXO75L3B481-250.000M
- SXO21C3B271-24.000M
- SQG32L2B271N-312.500M
- SXO53L3D161-125.000M
- SXO75P3D481-150.000M
- SXO22C3A271-40.000M
- SSO32L3A481-200.000M
- SXO22C3A161-24.000M
- SXO75L3C381-150.000M
- SXO53L3A161-106.250M
- SXO75C3A481-125.000M
- SQG32L3D071N-300.000M
- SXO75C3B381-40.000M
- SXO75L3A271-148.500M
- SXO22C3A071-48.000M
- SQG32L2A271N-312.500M
- SIT8208AC-83-28S-30.000000
- 936000475
- ISL69147-44-62P-EV1Z
- 85997535
- NRCE473L4050B1KO
- 25QHM572C1.0-66.405819
- DFR0833
- 1-1470107-6
- XQEAWT-00-0000-00000LEF4
- SIT1618AA-21-18S-20.000000
- XRP2526EVB
- 5614101055F
- 25QHM53D1.0-59.904
- CWF4B103F3380
- LC75817W-8720S-E-SY
- SIT8008BC-73-33E-12.288000
- MFM1T02A-SR-C
- 0455860003
- SIT9365AC-2E2-30N125.000000
- SIT9365AI-2B1-25N156.250000